Lam Research Introduces Lam Cryo™ 3.0 Cryogenic Etch Technology to Accelerate Scaling of 3D NAND for the AI Era
"Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND," said
To date, 3D NAND has primarily advanced through the stacking of vertical layers of memory cells, which are enabled by etching deep and narrow HAR memory channels. Slight, atomic-scale deviations from the target profile of these features can negatively affect electrical properties of the die and potentially impact yield. Lam Cryo 3.0 is optimized to address these and other etch challenges to scaling.
"AI is driving exponential demand in capacity and on the performance of flash memory both at the cloud and the edge. This is compelling chipmakers to scale NAND flash in the race to achieve 1000-layer 3D NAND by the end of 2030," said
The Industry's Most Advanced Cryogenic Etch Technology
Lam Cryo 3.0 utilizes the company's unique, high powered confined plasma reactors, process improvements and temperatures well below -0oC, which permit the harnessing of new, novel etch chemistries. When combined with the scalable, pulsed plasma technology of Lam's latest Vantex® dielectric system, etch depth and profile control is significantly increased. Using Lam Cryo 3.0 technology, 3D NAND manufacturers can etch memory channels with depths of up to 10 microns with less than 0.1% deviation* in the feature's critical dimension from the top to the bottom.
Other highlights include:
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Outstanding Productivity: Compared to conventional dielectric processes, Lam Cryo 3.0 etches two-and-a-half times faster, with better wafer-to-wafer repeatability, helping 3D NAND manufacturers to achieve high yield at lower cost.
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Higher Sustainability: Lam Cryo offers 40% reduction in energy consumption per wafer, and up to a 90% reduction in emissions compared to conventional etch processes.**
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Maximize Equipment Investment : For the optimal profile control and the fastest and deepest dielectric etch, Lam Cryo 3.0 can be integrated into Lam's newest Vantex system. It is also compatible with the company's portfolio of Flex® HAR dielectric etchers, used by all major memory manufacturers for 3D NAND mass production.
Leading 3D NAND Dielectric Etching
Lam Cryo 3.0 further extends to the company's two-decade-leadership in wafer fabrication etch technologies, which includes seven generations of 3D NAND. Lam introduced the world's first cryogenic etch offering into volume production in 2019. Of the over 7,500 Lam HAR dielectric etch chambers utilized in NAND production today, nearly 1,000 of them use cryogenic etch technology.
Lam Cryo 3.0 is now available to leading memory manufacturers. It is the latest addition to Lam's broad portfolio of etch, deposition and clean solutions for 3D NAND manufacturing. To learn more about Lam Cryo 3.0, visit https://www.lamresearch.com/products/our-solutions/cryogenic-etching/ .
Media Resources:
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Lam Newsroom Media Center: Contains Lam Cryo 3.0 images and press materials
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Counterpoint Research , white paper, "How to Scale to 1,000-Layer 3D NAND in the AI Era,"July 2024 -
Lam Blog , "Lam Cryo 3.0: What You Need to Know"
About
* Profile deviation calculated by maximum critical dimension minus minimum critical dimension divided by memory channel depth.
** Source:
Caution Regarding Forward-Looking Statements
Statements made in this press release that are not of historical fact are forward-looking statements and are subject to the safe harbor provisions created by the Private Securities Litigation Reform Act of 1995. Such forward-looking statements relate to, but are not limited to: market, industry and industry segment expectations; product performance and benefits to customers from the use of our technologies and products; and emissions and energy savings to be realized through the use of our technologies and products. Some factors that may affect these forward-looking statements include: trade regulations, export controls, trade disputes, and other geopolitical tensions may inhibit our ability to sell our products; business, political and/or regulatory conditions in the consumer electronics industry, the semiconductor industry and the overall economy may deteriorate or change; the actions of our customers and competitors may be inconsistent with our expectations; supply chain disruptions or manufacturing capacity constraints may limit our ability to manufacture and sell our products; natural and human-caused disasters, disease outbreaks, war, terrorism, political or governmental unrest or instability, or other events beyond our control may impact our operations in affected areas; as well as the other risks and uncertainties that are described in the documents filed or furnished by us with the
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