SK hynix Begins Mass Production of 321-Layer QLC NAND Flash
- Development of the industry's highest-density QLC product completed, commercial launch scheduled for the first half of next year following completion of customer validation
- Expansion of independent operation units ("planes") enables simultaneous large capacity and high performance, optimized for ultra-high-capacity eSSDs for AI servers
- Company to broaden cost-competitive, high-capacity product lineup in response to rapidly growing AI demand and high-performance requirements
To maximize the cost competitiveness of its new product, SK hynix developed a 2Tb device with double the capacity of existing solutions. To address potential performance degradation in large-capacity NAND, the company increased the number of planes[2], independent operation units within a chip, from 4 to 6. This enables greater parallel processing and significantly enhances simultaneous read performance.
As a result, the 321-layer QLC NAND delivers both higher capacity and improved performance compared to previous QLC products. Data transfer speed has doubled, write performance has improved by up to 56%, and read performance has improved by 18%. In addition, write power efficiency has increased by more than 23%, strengthening competitiveness in AI data centers where low power consumption is critical.
The company plans to apply its 321-layer NAND first to PC SSDs, before expanding to enterprise SSDs (eSSD) for data centers and UFS for smartphones. Leveraging its proprietary 32DP[3] technology, which enables the simultaneous stacking of 32 NAND dies in a single package, SK hynix aims to enter the ultra-high-capacity eSSD market for AI servers by achieving twice the integration density.
"With the start of mass production, we have significantly strengthened our high-capacity product portfolio and secured cost competitiveness," said Jeong Woopyo, Head of
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[1] NAND flash is categorized as single-level cell (SLC), multi-level cell (MLC), triple-level cell (TLC), QLC, and penta-level cell (PLC) depending on how many data bits can be stored in one cell. As the amount of information storage increases, more data can be stored in the same volume. |
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