Media Alert: Atomera Highlights MST® as a Toolbox for Engineering Silicon Virtual Substrates at 2025 CINT Annual User Meeting
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In-person poster entitled “MST: A Toolbox for Engineering Silicon Virtual Substrates: From GaN-on-Si to Piezo-Si and Spintronics” |
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With adjustable layer count, spacing and composition, MST can be precisely engineered to enhance key semiconductor properties, including diffusion blocking, variability, mobility, gate leakage and reliability across GaN-on-Si, piezoelectric and spintronic applications. The poster will cover:
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MST Substrate for GaN-on-Si Epitaxy
- Building on its successful use in CMOS and RF-SOI devices, MST grown on Si (111) substrates is now being explored as a virtual substrate for GaN-on-Si Epitaxy to improve material quality and device performance, reduce leakage current and provide higher breakdown voltage for RF and power applications.
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MST Piezoelectric Substrate
- The oxygen atoms in MST form polar Si–O–Si dipoles. These dipoles, while randomly oriented in their as-grown state, can be aligned through applied electric fields and mechanical stress. This alignment induces net polarization, effectively generating a measurable piezoelectric effect in an otherwise non-piezoelectric silicon, opening pathways for integrating piezoelectric functions directly into standard silicon chips.
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MST-Mn Diluted Magnetic Semiconductor Virtual Substrate for Spintronics
- MST enables spintronic applications by supporting stable, room-temperature diluted magnetic semiconductors (DMS) in silicon. With uniform distribution of elements like manganese (Mn), MST is expected to provide efficient spin injection and carrier-mediated ferromagnetism, unlocking next-gen devices like MRAM and spin-LEDs for energy-efficient computing.
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Company website: https://atomera.com/
LinkedIn: www.linkedin.com/company/atomera/
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