Toppan Photomask Signs Agreement with IBM for Joint R&D on Semiconductor EUV Photomasks
Advancing development of EUV photomasks for IBM's 2 nanometer technology designs
Based on this agreement, for a period of five years starting 1Q 2024, IBM and Toppan Photomask plan to develop photomask capability at the
Mass production of 2nm node and beyond semiconductors requires advanced knowledge in material selection and process control that far exceed the requirements of conventional mainstream exposure technology using an ArF excimer laser as a light source. The IBM and Toppan Photomask agreement brings these essential material and process control skills together to provide commercial solutions for 2nm node and beyond printing.
IBM and Toppan Photomask have a long history of technical cooperation. From 2005 to 2015, IBM and Toppan Photomask (then
Since then, Toppan Photomask has continued to actively develop and produce masks and substrate materials for EUV lithography. Additionally, manufacture of EUV production and next-generation development masks requires advanced multi-beam lithography equipment. Toppan Photomask is installing several of these systems to meet the latest semiconductor technology roadmap requirements.
About Toppan Photomask
Cautionary Statement
This press release contains forward-looking statements from IBM and Toppan Photomask based on current beliefs, assumptions, expectations, and involve risks, uncertainties that could cause actual outcomes to differ materially from current expectations.
Company Contact: |
Agency Contact: |
Bud Caverly |
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Toppan Photomask |
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Phone: +1-503-913-0694 |
Phone: +1-408-829-0106 |
Email: bud.caverly@photomask.com |
Email: akellen@openskypr.com |
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