Alpha and Omega Semiconductor Introduces 25V MOSFET in DFN3.3x3.3 Source-Down Packaging that Meets Power Demands in AI Servers
Designed to support high-power density, state-of-the-art DFN3.3x3.3 Source-Down packaging features center gate technology for easier routing on the PCB
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Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI servers and data center power distribution.
Offering outstanding current handling capabilities, the AONK40402 MOSFET’s DFN3.3x3.3 Source-Down packaging technology with clip enables continuous current capabilities up to 319A with a maximum junction temperature rated at 175°C. This provides significant potential for system-level improvements, such as better thermal management, enabling higher power density and greater efficiency.
“AONK40202, which utilizes advanced DFN3.3x3.3 Source-Down technology, offers a reduction in power losses and delivers better thermal performance compared to traditional DFN3.3x3.3 Drain-Down packaging solutions. The AONK40202, with its lower on-state resistance (RDS(on)) and enhanced thermal performance, provides designers with the advanced technologies necessary to utilize PCB space more effectively. These features and many more in the AONK40202 are specifically designed to meet the increasing power density demands of AI servers,” said
Technical Highlights
Part Number |
Package |
VDS (V) |
VGS (±V) |
TJ (°C) |
Continuous Drain Current (A) |
Pulsed Drain Current (A) |
RDS(ON) Max (mOhms) @10V |
|
@25°C |
@100°C |
@25°C |
||||||
AONK40202 |
DFN3.3x3.3B |
25 |
12 |
175 |
319 |
224 |
644 |
0.7 |
Pricing and Availability
The AONK40202 is immediately available in production quantities with a lead time of 14-16 weeks. The unit price in 1,000-piece quantities is
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Forward-Looking Statements
This press release contains forward-looking statements that are based on current expectations, estimates, forecasts, and projections of future performance based on management’s judgment, beliefs, current trends, and anticipated product performance. These forward-looking statements include without limitation, references to the efficiency and capability of new products and the potential to expand into new markets. Forward-looking statements involve risks and uncertainties that may cause actual results to differ materially from those contained in the forward-looking statements. These factors include but are not limited to, the actual product performance in volume production, the quality and reliability of the product, our ability to achieve design wins, the general business and economic conditions, the state of the semiconductor industry, and other risks as described in the Company’s annual report and other filings with the
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