Power Integrations Details 1250 V and 1700 V PowiGaN Technology for Next-Generation 800 VDC AI Data Centers
Company is collaborating with NVIDIA on 800 VDC power architecture; new white paper shows advantages of 1250 V PowiGaN technology vs. 650 V GaN and 1200 V SiC
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20251013503136/en/
The new white paper details the performance advantages of Power Integrations’ industry-first 1250 V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power-density and efficiency requirements (>98%) of the 800 VDC architecture. Further, the paper demonstrates that a single 1250 V PowiGaN switch delivers greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices.
The white paper also highlights Power Integrations’ InnoMux™2-EP ICs as a unique solution for auxiliary power supplies in 800 VDC data centers. The InnoMux-2 device’s integrated 1700 V PowiGaN switch supports 1000 VDC input voltage, while its SR ZVS operation provides greater than 90.3 percent of 12 V system efficiency in a liquid-cooled, fan-less 800 VDC architecture.
“With rising AI power demands, moving to an 800 VDC input simplifies rack design, makes more efficient use of space and reduces copper usage,” said
For more information on Power Integrations’ PowiGaN technology for AI data centers and to access the white paper, titled “1250 V / 1700 V PowiGaN for 800 VDC AI Data Center Architecture,” please visit power.com/ai-data-center. To read NVIDIA’s technical blog on 800 VDC, clickhere.
About
View source version on businesswire.com: https://www.businesswire.com/news/home/20251013503136/en/
Media Contact
(408) 206-1387
beth.makosey@power.com
Source: