Faraday Broadens IP Offerings on UMC’s 14nm Process for Edge AI and Consumer Markets
HSINCHU,
Faraday continues building out its IP solutions on UMC’s 14nm node. All these IPs are silicon-proven to ensure production-quality, significantly reducing design risk while assisting designers in shortening development cycles and effectively managing design and manufacturing costs. For edge AI applications, Faraday’s fabless OSAT Service provides advanced 2.5D/3D packaging options, including memory controller and I/O integration, to meet the high-bandwidth and capacity requirements of AI computing and further enhance overall system-performance.
“With decades of IP development and ASIC design experience, Faraday continues investing in expanding its IP offerings to address diverse customer requirements,” said Flash Lin, Chief Operating Officer of Faraday. “By combining a robust, silicon-proven IP portfolio with deep ASIC-design expertise, Faraday helps customers transition to the FinFET platform and leverage the advantages of ASIC solutions in AI applications.”
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